Major Accomplishments of KIST Over Its 40-Year History. Since its foundation over 40 years ago, KIST has remained faithful to its role as a comprehensive research institute supporting Korea's interests and has made active contributions to the growth of the nation's industrial base through advancements in science and technology. A review of its major accomplishments through the years offer a peek into the most significant events in its history.

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Project Name Spin FET device technology development
Year 2009 Director Dr.Han, Suk Hee
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1. Content & Characteristic
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■ World's first demonstration of spin FET has been realized after the theoretical prediction some 20 years ago. The spin direction of electrons in a high mobility InAs channel can be modulated using gate voltage. The oscillatory channel conductance controlled by gate voltage has successfully been  observed.
■ Sb based magnetic logic device has been developed. High mobility InSb channels show drastic change in magneto conductance at room temperature.
■ New materials technology have been developed for spintronic applications, such as adopting an MgO tunnel barrier between the ferromagnet and semiconductor to improve spin injection and detection efficiency.
 
2. Scientific Value
■ The technology to electrically control the spin of electrons enables us to unify the spin devices with the conventional semiconductor devices.
■ The electronic and magnetic properties of new materials are better understood through its application in spintronic devices using cluster MBE system.
 
3. Economic Effect

■ Using the spin information of electrons as well as the conventional charge information can dramatically improve computational capability of field effect transistors.
■ High sensitivity magnetic sensors can be developed.

    

■ World's first demonstration of spin FET has been realized after the theoretical prediction some 20 years ago. The spin direction of electrons in a high mobility InAs channel can be modulated using gate voltage. The oscillatory channel conductance controlled by gate voltage has successfully been  observed.
■ Sb based magnetic logic device has been developed. High mobility InSb channels show drastic change in magneto conductance at room temperature.
■ New materials technology have been developed for spintronic applications, such as adopting an MgO tunnel barrier between the ferromagnet and semiconductor to improve spin injection and detection efficiency.
 
2. Scientific Value
■ The technology to electrically control the spin of electrons enables us to unify the spin devices with the conventional semiconductor devices.
■ The electronic and magnetic properties of new materials are better understood through its application in spintronic devices using cluster MBE system.
 
3. Economic Effect

■ Using the spin information of electrons as well as the conventional charge information can dramatically improve computational capability of field effect transistors.
■ High sensitivity magnetic sensors can be developed.

    
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