|Project Name||Development of flexible memory cell array|
|Year||2013||Director||Dr. TAE-WOOK KIM|
Development of flexible memory cell array
1. Content & Characteristic
O This research aims for development of new organic memory and diode materials
for next-generation flexible and twistable memory devices with high-density,
ultimate flexibility and without cross-talk issue to overcome the technological
limits of the conventional silicon and inorganic material based electronics.
- Carbon nanomaterials with organic matrix materials was developed as memory materials
and new small molecule based photo sensitive crosslinker was introduced to patterning of
both memory and diode materials.
- Memory cell and diode cell was vertically integrated in 8 x 8 cell array on the flexible
substrate using low temperature processes.
2. Scientific and Technological Value
O This research is the first research on memory cell array with one diode-one
resistor (1D-1R)cell array architecture on flexible substrate without any cross-
3. Social and Economic Effect
O Development of methodology to design new flexible materials for high density,
high performance, multi-functional flexible electronics
O World leading group in the field of carbon composite based flexible electronic
|Before||Development of Multi-dimensional nanomaterials via Random Alignment Mediated by Supercritical Carbon Dioxide|
|Next||Fabrication Technique of Ultrahigh-Density Desalination Membranes|